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Freescale Semiconductor Technical Data
MRF5P20180HR6 Rev. 0, 12/2004
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 mA, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched, Controlled Q, for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P20180HR6
1990 MHz, 38 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +65 - 0.5, +15 530 3.0 - 65 to +150 200 120 Unit Vdc Vdc W W/C C C W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 120 W CW Case Temperature 72C, 38 W CW Symbol RJC Value (1) 0.33 0.35 Unit C/W
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF5P20180HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th) VGS(Q) VDS(on) gfs
2.5 -- -- --
2.7 3.6 0.26 5
3.5 -- 0.3 --
Vdc Vdc Vdc S
Crss
--
1.7
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) (2) VDD = 28 Vdc, IDQ = 2 x 800 mA, Pout = 38 W Avg., f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps D IM3 ACPR IRL 12.5 23 -- -- -- 14 26 - 37.5 - 41 - 16 -- -- - 35 - 38 -9 dB % dBc dBc dB
1. Each side of device measured separately. Part is internally matched both on input and output. 2. Measurements made with device in push - pull configuration.
MRF5P20180HR6 2 RF Device Data Freescale Semiconductor
R1 VBIAS R2 + C14 Z17 C10 C8 Z15 Z13 Z19
C6
C12
+ C16
+ C17
+
VSUPPLY C20
Z21 C4 Z23
Z7 C2 RF INPUT Z1 Z3 Z2 Z4 C1 Z5 Z6
Z9
Z11
DUT
Z24
Z25
RF OUTPUT
Z8 C3
Z10
Z12
Z16 Z14 R3 VBIAS R4 + C15
Z20 C5 Z18
Z22
C11
C9 C7 C13 + C18 + C19 + VSUPPLY C21
Z1 Z2 Z3 Z4 Z5, Z24 Z6, Z23 Z7, Z8 Z9, Z10
0.081 0.079 0.081 0.081 0.134 0.081 0.081 0.081
x 1.126 Microstrip x 0.138 Microstrip x 0.091 Microstrip x 0.117 Microstrip x 0.874 Microstrip x 2.269 Microstrip x 0.118 Microstrip x 0.079 Microstrip
Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z21, Z22 Z25 PCB
0.341 x 0.945 Microstrip 0.035 x 0.913 Microstrip 0.581 x 0.823 Microstrip 0.059 x 1.057 Microstrip 0.081 x 0.046 Microstrip 0.081 x 0.126 Microstrip 0.081 x 0.793 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 1. MRF5P20180HR6 Test Circuit Schematic Table 5. MRF5P20180HR6 Test Circuit Component Designations and Values
Part C1 C2, C3, C4, C5, C6, C7 C8, C9 C10, C11, C12, C13 C14, C15, C16, C17, C18, C19 C20, C21 R1, R2, R3, R4 Description 1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 F, 35 V Tantalum Capacitors 220 F, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Part Number 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer ATC ATC ATC ATC AVX Philips
MRF5P20180HR6 RF Device Data Freescale Semiconductor 3
MRF5P20180
Rev 1
VGG
R1
R2
C14
C10 C8
C12 C16 C17 C6
VDD
C20 C2 STRAP C1 CUT OUT AREA C4
C3
C5
C21 C9 VGG R3 R4 C15 C11 C7 C13 C18 C19 VDD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF5P20180HR6 Test Circuit Component Layout
MRF5P20180HR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 -35 2400 mA IRL, INPUT RETURN LOSS (dB) 15 14 13 G ps , POWER GAIN (dB) 12 11 IRL Gps D VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 40 35 30 25 20 -20 -25 -30 IM3 -35
10 9 8 7 6
-40 ACPR 5 -45 1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
16 15.5 G ps , POWER GAIN (dB) 15 IDQ = 2400 mA 2000 mA 1600 mA 1200 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 1 10 100 1000 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 1200 mA 1600 mA 2000 mA VDD = 28 Vdc f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing IDQ = 800 mA
14.5 14
13.5 13
12.5 12 11.5 11
800 mA VDD = 28 Vdc f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 7th Order -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1600 mA Two-Tone Measurements, Center Frequency = 1960 MHz 1 10 100 5th Order 3rd Order Pout , OUTPUT POWER (dBm)
58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 30
Ideal P3dB = 54 dBm (251 W) P1dB = 53.5 dBm (224 W) Actual
VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 5 sec(on), 1 msec(off) Center Frequency = 1960 MHz 32 34 36 38 40 42 44 46
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power MRF5P20180HR6
RF Device Data Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS, Avg.) W-CDMA 100 VDD = 28 Vdc, IDQ = 1600 mA f1 = 1955 MHz, f2 = 1965 MHz 2 x W-CDMA 10 MHz @ 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) D -20 -25 -30 IM3 -35 ACPR Gps -40 -45 -50 -55 107 100 IM3 (dBc), ACPR (dBc) 1010 MTTF FACTOR (HOURS x AMPS2)
109
108
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -25 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5P20180HR6 6 RF Device Data Freescale Semiconductor
f = 1930 MHz Zload f = 1990 MHz f = 1990 MHz Zo = 25
Zsource f = 1930 MHz
VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 1930 1960 1990 Zsource 6.54 - j16.04 9.70 - j17.92 13.88 - j20.46 Zload 4.06 - j5.56 3.70 - j5.48 3.64 - j5.76
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 12. Series Equivalent Source and Load Impedance
MRF5P20180HR6 RF Device Data Freescale Semiconductor 7
NOTES
MRF5P20180HR6 8 RF Device Data Freescale Semiconductor
NOTES
MRF5P20180HR6 RF Device Data Freescale Semiconductor 9
NOTES
MRF5P20180HR6 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE)
B
D
TA
M
B
M
ccc ccc
M
M
TA
(LID)
M
B
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375D - 05 ISSUE D NI - 1230
MRF5P20180HR6 RF Device Data Freescale Semiconductor 11
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MRF5P20180HR6
MRF5P20180HR6 Rev. 0, 12/2004
12
RF Device Data Freescale Semiconductor

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